TC1102 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1/4 super low noise gaas fets features low noise figure: nf = 0.5 db typical at 12 ghz photo enlargement high associated gain: ga = 13 db typical at 12 ghz lg = 0.25 m, wg = 160 m all-gold metallization for high reliability tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1102 is a gaas pseudomorphic high electron mobility transistor (phemt) chip, which has very low noise figure and high associated gain. the device can be used in circuits up to 30 ghz and suitable for low noise application including a wide range of commerci al and military applications. all devices are 100% dc tested to assure consistent quality. all bond pa ds are gold plated for either thermo-compression or thermo-sonic wire bonding. electrical specifications (t a =25 c) symbol conditions min typ max unit nf noise figure at v ds = 2 v, i ds = 10 ma , , f = 12ghz 0.5 0.7 db g a associated gain at v ds = 2 v, i ds = 10 ma, f = 12ghz 11 13 db i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 48 ma g m transconductance at v ds = 2 v, v gs = 0 v 55 ms v p pinch-off voltage at v ds = 2 v, i d = 0.32 ma -1.0* volts bv dgo drain-gate breakdown voltage at i dgo =0.08 ma 5 8 volts r th thermal resistance 225 c/w note: * for the tight control of the pinch-off voltage . TC1102?s are divided into 3 groups: (1) TC1102p0710 : vp = -0.7v to -1.0v (2) TC1102p0811 : vp = -0.8v to -1.1v (3) TC1102p0912 : vp = -0.9v to -1.2v in addition, the customers may specify their requir ements. absolute maximum ratings (t a =25 c) typical noise parameters (t a =25 c) v ds = 2 v, i ds = 10 ma symbol parameter rating v ds drain-source voltage 5 v v gs gate-source voltage -3.0 v i ds drain current i dss i gs gate current 160 a p in rf input power, cw 17 dbm p t continuous dissipation 250 mw t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c opt frequency (ghz) nf opt (db) g a (db) mag ang rn/50 2 0.30 19.0 0.98 15 0.40 4 0.32 17.4 0.84 30 0.35 6 0.34 15.7 0.68 50 0.26 8 0.37 14.3 0.51 76 0.19 10 0.42 12.9 0.38 107 0.12 12 0.47 11.9 0.28 146 0.08 14 0.56 11.4 0.25 193 0.07 16 0.70 11.2 0.32 250 0.11 18 0.87 10.9 0.49 317 0.23
TC1102 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2/4 chip dimensions units: micrometers gate pad: 55 x 60 chip thickness: 100 drain pad: 55 x 60 source pad: 55 x 14 250 12 280 12 s s d g
TC1102 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3/4 typical scattering parameters (t a =25 c ) v ds = 2 v, i ds = 10 ma frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.9909 -20.88 4.1640 163.83 0.0305 77.18 0.7466 - 11.01 3 0.9805 -30.94 4.0654 156.02 0.0447 71.04 0.7346 - 16.27 4 0.9673 -40.57 3.9385 148.51 0.0577 65.20 0.7193 - 21.26 5 0.9524 -49.69 3.7916 141.35 0.0694 59.71 0.7019 - 25.95 6 0.9367 -58.26 3.6326 134.56 0.0798 54.59 0.6835 - 30.31 7 0.9209 -66.26 3.4682 128.16 0.0888 49.85 0.6650 - 34.35 8 0.9057 -73.69 3.3038 122.13 0.0966 45.48 0.6471 - 38.08 9 0.8913 -80.57 3.1430 116.45 0.1033 41.45 0.6302 - 41.53 10 0.8780 -86.92 2.9885 111.09 0.1090 37.74 0.6146 -44.73 11 0.8659 -92.79 2.8417 106.02 0.1139 34.32 0.6005 -47.70 12 0.8551 -98.22 2.7033 101.22 0.1181 31.16 0.5880 -50.49 13 0.8453 -103.24 2.5737 96.66 0.1216 28.24 0.5770 -53.11 14 0.8366 -107.89 2.4526 92.32 0.1247 25.52 0.5674 -55.59 15 0.8290 -112.20 2.3399 88.16 0.1272 22.98 0.5593 -57.95 16 0.8222 -116.22 2.2349 84.17 0.1295 20.61 0.5525 -60.21 17 0.8163 -119.96 2.1373 80.33 0.1313 18.38 0.5468 -62.39 18 0.8111 -123.45 2.0464 76.64 0.1329 16.28 0.5423 -64.49 * the data does not include gate, drain and source bond wires. 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s11 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 0.15 0.075 per div s12 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 5 1 per div s21 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s22
TC1102 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4/4 small signal model , v ds = 2 v, i ds = 10 ma schematic cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.038 nh rs 1.7200 ohm rg 0.970 ohm ls 0.0010 nh cgs 0.222 pf cds 0.0610 pf ri 1.780 ohm rds 328.00 ohm cgd 0.027 pf rd 1.6980 ohm gm 53.30 ms ld 0.0229 nh t 1.490 psec chip handling die attachment: conductive epoxy or eutectic die attach is recommen ded. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at st age temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompressi on bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperat ure. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electr ostatic discharge (esd) precautions should be obser ved at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v.
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